Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas
نویسندگان
چکیده
We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron-electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.
منابع مشابه
Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the f...
متن کاملCorrigendum: Artificial Gauge Field and Topological Phase in a Conventional Two-dimensional Electron Gas with Antidot Lattices
Based on the Born-Oppemheimer approximation, we divide the total electron Hamiltonian in a spin-orbit coupled system into the slow orbital motion and the fast interband transition processes. We find that the fast motion induces a gauge field on the slow orbital motion, perpendicular to the electron momentum, inducing a topological phase. From this general designing principle, we present a theor...
متن کاملCalculation of Quasi-one-dimensional Interacting Electron Gas Using the Hartree-Fock Method
In this paper, the Hartree-Fock method has been formulated to investigate some of the ground state properties of quasi-one-dimensional interacting electron gas in the presence of the magnetic field. The bare coulomb interaction between electrons has been assumed. For this system, we have also computed some of its thermodynamic and magnetic properties such as the energy, pressure, incompressibil...
متن کاملGate-controlled electron spin resonance in GaAsÕAlxGa1ÀxAs heterostructures
The electron spin resonance ~ESR! of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of th...
متن کاملQuantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls
The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...
متن کامل